High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) 1st Edition by Niladri Pratap Maity 9781000527445 1000527441

High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) 1st Edition Niladri Pratap Maity – Ebook Instant Download/Delivery ISBN(s): 9780429325779, 9781771888431, 9782020015813, 0429325770, 1771888431, 2020015811, 2020015812, 9781000527445, 1000527441

Product details:

• ISBN 10: 1000527441
• ISBN 13: 9781000527445
• Author: Niladri Pratap Maity

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Table contents:

1. Moore’s Law: In the 21st Century
2. SiO2-Based MOS Devices: Leakage and Limitations
3. High-k Dielectric Materials: Structural Properties and Selection
4. Selection of High-k Dielectric Materials
5. Tunneling Current Density and Tunnel Resistivity: Application to High-k Material HfO2
6. Analysis of Interface Charge Density: Application to High-k Material Tantalum Pentoxide
7. High-k Material Processing in CMOS VLSI Technology
8. Tunnel FET: Working, Structure, and Modeling
9. Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications

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