75th Anniversary of the Transistor 1st Edition by Arokia Nathan, Samar Saha, Ravi Todi 139420244X 9781394202447

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ISBN 10: 139420244X

ISBN 13: 9781394202447

Author: Arokia Nathan, Samar K. Saha, Ravi M. Todi

 

75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications.

The book reflects the transistor’s development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments.

Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights:

• Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor
• Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry
• Large scale integration, Moore’s Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989)
• Image sensors (1986), including charge-coupled devices, and related microsensor applications

With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

75th Anniversary of the Transistor 1st Table of contents:

Chapter 1: The First Quantum Electron Device

Reference

Chapter 2: IEEE Electron Devices Society

2.1 Introduction

2.2 Origins of EDS

2.3 Growth of EDS

2.4 Publications

2.5 Conferences

2.6 Awards and Recognition

2.7 Conclusion

References

Chapter 3: Did Sir J.C. Bose Anticipate the Existence of p‐ and n‐Type Semiconductors in His Coherer/Detector Experiments?

3.1 Introduction

3.2 J.C. Bose: A Brief Biography

3.3 Bose’s Work on Detectors

3.4 Mott’s Remark

3.5 Understanding Semiconductors and Doping

3.6 Interpretation of Mott’s Remark

3.7 Conclusion

Acknowledgments

References

Chapter 4: The Point‐Contact Transistor

4.1 Introduction

4.2 Background and Motivation

4.3 Inventors’ Understanding How a Point‐Contact Transistor Operates

4.4 Recreating the Point‐Contact Transistor

4.5 Concluding Remarks

References

Chapter 5: On the Shockley Diode Equation and Analytic Models for Modern Bipolar Transistors

5.1 Introduction

5.2 Adaptation of Shockley Diode Equation to Modern Bipolar Transistors

5.3 Modern Bipolar Transistors Structures

5.4 Analytic Models for Modern Bipolar Transistors

5.5 Discussion

References

Chapter 6: Junction‐Less Field Effect Transistors

6.1 Introduction

6.2 Structure and Operation

6.3 Salient Features of JLFETs

6.4 Challenges for JLFETs

6.5 Unconventional Applications of JL Architecture

6.6 Conclusions

References

Chapter 7: The First MOSFET Design by J. Lilienfeld and its Long Journey to Implementation

7.1 Introduction

7.2 Demand for the Development of the Solid‐State Amplifier and Its Difficulty

7.3 Grid‐Inserted MESFETs

7.4 Lilienfeld Patents for the MESFET and MOSFET

7.5 Necessary Conditions for Successful MOSFET Operation, and MOSFET Development Chronology

7.6 Status of the Semiconductor Physics at the Lilienfeld Period (in the 1920s) and Thereafter

7.7 Improvement of Si and Ge Material Quality and Discovery of the pn Junction in the 1940s

7.8 H. Welker’s MISFET with Inversion Channel in 1945

7.9 Shockley’s Group Study for MOSFET from 1945 to 1947

7.10 Technology Development in the 1950s Until the First Successful MOSFET Operation in 1960

7.11 Success of MOSFET Operation by D. Kahng and M. Attala in 1960

7.12 After the First Successful Operation of the MOSFET

7.13 Summary and Conclusions

Acknowledgment

References

Chapter 8: The Invention of the Self‐Aligned Silicon Gate Process

References

Chapter 9: The Application of Ion Implantation to Device Fabrication

9.1 Introduction

9.2 Device Fabrication

9.3 Summary

Acknowledgments

References

Chapter 10: Evolution of the MOSFET

10.1 Introduction

10.2 The Early Days: Before 1980

10.3 From 1980 to 2000

10.4 The Latest: After 2000

10.5 Conclusion

References

Chapter 11: The SOI Transistor

11.1 The Beginnings

11.2 The Renaissance

11.3 The Smart‐Cut Dynasty

11.4 Special Mechanisms in FD‐SOI MOSFET

11.5 A Selection of Innovating Devices

11.6 The Future

References

Chapter 12: FinFET

12.1 The Show Stopper

12.2 The Cause of the Power Crises

12.3 The Real Cause of the Power Crises

12.4 A DARPA Request for Proposal

12.5 The Challenges and Team Work

12.6 Further Advancements by Industry

12.7 Conclusion

References

Chapter 13: Historical Perspective of the Development of the FinFET and Process Architecture

13.1 Introduction

13.2 Requirements for the End of CMOS Scaling

13.3 Restrictions of Planar Process Technology

13.4 Prompted Device/Process Technology Evolution by FinFET

13.5 Conclusion

References

Chapter 14: The Origin of the Tunnel FET

14.1 Background

14.2 Conception

14.3 Realization

14.4 Relevance

14.5 Prospects

References

Chapter 15: Floating‐Gate Memory

15.1 Introduction

15.2 The Charge‐Storage Concept

15.3 Early Device Structures

15.4 Multi‐Level Cells and 3D Structures

15.5 Applications

15.6 Scaling Challenges

15.7 Alternative Structures

15.8 Conclusion

Acknowledgments

References

Chapter 16: Development of ETOX NOR Flash Memory

16.1 Introduction

16.2 Background

16.3 Not the Perfect Solution

16.4 ETOX Development Challenges

16.5 Building a Business

16.6 Closing Words

Acknowledgments

References

Chapter 17: History of MOS Memory Evolution on DRAM and SRAM

17.1 Introduction

17.2 Revolutionary Technologies in DRAM History

17.3 Revolutionary Technologies in SRAM History

17.4 Summary

References

Chapter 18: Silicon‐Germanium Heterojunction Bipolar Transistors

18.1 Introduction (JDC)1

18.2 Some History from Early Days at IBM Research (SSI)

18.3 SiGe Epitaxy and Making the First SiGe Transistor (SSI)

18.4 MBE vs. UHV/CVD vs. APCVD for SiGe epi (SSI)

18.5 Putting Physics to Work – The Properties of SiGe HBTs (JDC)

18.6 SiGe BiCMOS: Devices to Circuits to Systems (JDC and SSI)

18.7 Using SiGe in Extreme Environments (JDC)

18.8 New Directions (JDC and SSI)

18.9 Some Parting Words (SSI)

References

Chapter 19: The 25‐Year Disruptive Path of InP/GaAsSb Double Heterojunction Bipolar Transistors

19.1 Introduction

19.2 Phase I: Simon Fraser Years (1995–2006)

19.3 Phase II: ETH Years (2006–2022)

19.4 Response to Innovation

19.5 Final Words

References

Chapter 20: The High Electron Mobility Transistor

20.1 Introduction

20.2 HEMT Electronics

20.3 Modulation‐Doped Structures in Physics

20.4 Exciting Prospects

20.5 Conclusions

Acknowledgments

References

Chapter 21: The Thin Film Transistor and Emergence of Large Area, Flexible Electronics and Beyond

21.1 Birth of Large Area Electronics

21.2 Polycrystalline Silicon and Oxide Thin Film Transistor

21.3 Trends in TFT Development

Acknowledgments

References

Chapter 22: Imaging Inventions

22.1 Setting the Stage for the Invention of the Charge‐Coupled Device (CCD)

22.2 The Invention of the CCD

22.3 Verifying the CCD Concept

22.4 The Invention of CCD Imagers

22.5 The First Solid‐State Color TV Camera

22.6 Mixed Analog Design Modem Chip

Acknowledgement

References

Chapter 23: The Invention and Development of CMOS Image Sensors

23.1 Introduction

23.2 Underlying Technology

23.3 Early Solid‐State Image Sensors

23.4 Invention of CMOS Image Sensors

23.5 Photon‐Counting CMOS Image Sensors

23.6 Conclusion

Acknowledgments

References

Chapter 24: From Transistors to Microsensors

24.1 Early Encounters

24.2 Integration

24.3 Silicon Sensors

24.4 Transistor Sensors

24.5 CMOS End Fabrication

24.6 Outlook

Acknowledgments

References

Chapter 25: Creation of the Insulated Gate Bipolar Transistor

25.1 Introduction

25.2 Historical Context

25.3 The Brock Effect

25.4 My IGBT Proposal

25.5 The Welch Edict

25.6 Manufacturing the First IGBT Product

25.7 First IGBT Product Release

25.8 IGBT Technology Enhancement

25.9 IGBT Evolution

25.10 IGBT Applications

25.11 IGBT Social Impact

25.12 My Sentiments

References

Chapter 26: The History of Noise in Metal‐Oxide‐Semiconductor Field‐Effect Transistors

26.1 Introduction

26.2 MOSFET Noise Time Line

26.3 Channel Thermal Noise

26.4 Induced Gate and Substrate Current Noise

26.5 Gate–Drain Current Noise Cross Correlation

26.6 Equilibrium Noise

26.7 Bulk Charge Effects

26.8 Gate Resistance Noise

26.9 Substrate Resistance Noise

26.10 Substrate and Gate Current Noise

26.11 Short‐Channel Effects

26.12 Effect on Channel Thermal Noise

26.13 1/f Noise

26.14 Conclusions

Acknowledgments

References

Chapter 27: A Miraculously Reliable Transistor

27.1 Introduction: A Transistor is Born

27.2 Transistor Reliability in the Proto‐Scaling Era

27.3 Reliability of Geometric‐ and Equivalent‐Scaling Eras

27.4 Conclusions: Reliability Challenges for the Hyper‐Scaling and Functional‐Scaling Eras

References

Chapter 28: Technology Computer‐Aided Design

28.1 Introduction

28.2 Short History

28.3 Scaling and Model Complexity

28.4 MINIMOS Commercialization and Beyond

28.5 Design Technology Co‐Optimization at Advanced Nodes

28.6 Electron Spin for Microelectronics

28.7 Summary and Outlook

References

Chapter 29: Early Integrated Circuits

References

Chapter 30: A Path to the One‐Chip Mixed‐Signal SoC for Digital Video Systems

30.1 Introduction

30.2 Bipolar ADCs at Early Development Stage of Digital TVs

30.3 A CMOS ADC for Digital Handy Camcorder

30.4 One‐Chip Mixed‐Signal SoC for DVD

References

Chapter 31: Historical Perspective of the Nonvolatile Memory and Emerging Computing Paradigms

31.1 Introduction

31.2 Rise of Solid‐State Nonvolatile Memory

31.3 NVM in Classical Computer Architectures

31.4 NVM‐Driven New Computing Paradigm

31.5 Conclusion

References

Chapter 32: CMOS Enabling Quantum Computing

32.1 Why Cryogenic Electronics?

32.2 The Quantum Stack

32.3 Modeling Cryo‐CMOS Devices

32.4 Specific Effects in Cryo‐CMOS Transistors

32.5 Perspectives and Trends

References

Chapter 33: Materials and Interfaces

33.1 Introduction

33.2 Back‐End‐of‐Line

33.3 Channel Materials

33.4 Gate Stack

33.5 Contacts

33.6 Summary

References

Chapter 34: The Magic of MOSFET Manufacturing

34.1 Introduction

34.2 The Magic of MOS

34.3 The Magic of Self‐alignment

34.4 The Magic of Semiconductor Manufacturing

34.5 Transistor Magic for the NEXT 75 Years?

References

Chapter 35: Materials Innovation

35.1 Introduction

35.2 MOSFET Basics

35.3 Complementary MOS (CMOS) Technology

35.4 MOSFET Scaling Challenges

35.5 MOSFET Materials Innovations

35.6 Outlook for Continued Transistor Scaling

References

Chapter 36: Germanium

36.1 Introduction

36.2 Need for High Mobility Material for MOS Channel

36.3 Surface Passivation of Ge‐Based MOSFETs

36.4 Low Resistance Contacts to Ge

36.5 Heteroepitaxial Growth of Ge on Si

36.6 Strained Ge and Heterostructure FETs

36.7 Nanoscale Ge FETs

36.8 Ge NMOSFETs

36.9 Ge‐Based Novel Devices for Optical Interconnects

36.10 Summary

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